研究目的
To describe a complex of equipment for diagnosing the parameters of laser radiation of semiconductor targets excited by high-frequency-modulated electron-beam pulses and to demonstrate the ability to control the shape and duration of laser radiation in the picosecond range.
研究成果
The developed complex of equipment allows for the control of laser radiation parameters in the picosecond range through high-frequency modulation of electron-beam pulses. This method provides a way to reduce the EB threshold power and adjust the shape and duration of laser pulses, offering potential for further research in increasing the intensity and reducing the duration of laser pulses.
研究不足
The study was limited by the technical and experimental difficulties in further increasing the EB frequency and power using methods of nonlinear electrodynamics. The application of this method to other semiconductors was not explored in depth.
1：Experimental Design and Method Selection:
The study utilized a complex for investigating semiconductor targets excited by electron beams with high-frequency modulation of the accelerating voltage. The methodology included the use of a nonlinear gyromagnetic ferrite line for high-frequency modulation.
2：Sample Selection and Data Sources:
Semiconductor targets made of single-crystal CdS film were used. The selection criteria focused on the physical characteristics of cadmium sulfide.
3：List of Experimental Equipment and Materials:
Equipment included a RADAN-303 generator, a two-stage amplitude-to-time converter, a nonlinear gyromagnetic ferrite line, and various sensors for measuring EB current and laser radiation characteristics.
4：Experimental Procedures and Operational Workflow:
The process involved generating high-voltage pulses, modulating them with a ferrite line, exciting semiconductor targets, and measuring the resulting laser radiation.
5：Data Analysis Methods:
The shape and duration of laser pulses were analyzed using streak photographs and oscillograms of voltage and current pulses.
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