研究目的
To study the micro/nano-structure fabrication with a moving crystalline Ge <100> surface irradiated with MHz scale repetition rate ultrashort laser pulses at close to the melting threshold fluence of Ge.
研究成果
Controlled fabrication of periodic micro/nano-structures on crystalline Ge <100> surface using ultrashort laser pulses under ambient condition has been presented. The micro-Raman analysis reveals that the micro/nano-structures were formed without significant changes to crystallinity of the Ge sample used. Thus, an ultrashort pulsed laser can be used as a simple technique for the fabrication of micro/nano-structures under ambient conditions.
研究不足
The study is limited to the fabrication of micro/nano-structures on crystalline Ge surfaces under ambient conditions with ultrashort laser pulses. The influence of laser beam polarization direction on the formation of nano-structures was studied, but other factors such as different materials or conditions were not explored.
1：Experimental Design and Method Selection:
The study used an ultrashort pulsed fibre laser system to deliver laser pulses at 1064 nm wavelength, with pulse duration ranging from 200 fs to
2：8 ps. The laser beam was linearly polarized and focused on the sample surface using a lens of 100 mm focal length. Sample Selection and Data Sources:
Crystalline Ge wafer of <100> orientation was used, with thickness and diameter of 487 μm and 25 mm, respectively.
3：List of Experimental Equipment and Materials:
Ultrashort pulsed fibre laser system, attenuator unit, beam expander, lens, Newport X-Y translation stage.
4：Experimental Procedures and Operational Workflow:
The sample was irradiated with laser radiation of fluence
5：1 J/cm2, close to the melting threshold of crystalline Ge. The laser pulse repetition rate and pulse duration used were 5 MHz and 8 ps, respectively. Data Analysis Methods:
Scanning Electron Microscopy (SEM) and micro Raman techniques were used to analyze the irradiated surface.
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