研究目的
Investigating the effectiveness of CW laser scanning technology in refining the surface of silicon wafers by redistributing metal impurities and forming a purity region near the surface, with potential applications in solar cell materials.
研究成果
The CW laser scanning technology effectively refines the surface of silicon wafers by redistributing metal impurities and forming a purity region near the surface. The metal impurity concentration in the purity region significantly reduced, meeting the requirement of solar grade silicon. This technology has great potential in the field of solar cell materials.
研究不足
The depth for a single SIMS measurement cannot exceed 10 μm, limiting the study of the complete depth profile of the metal impurity in a single profile. The width of the molten pool must be within 10 μm to obtain a complete depth profile.
1：Experimental Design and Method Selection:
A YAG continue-wave laser was used to refine the surface of silicon wafers, causing melting and recrystallization to redistribute metal impurities.
2：Sample Selection and Data Sources:
Two groups of samples were prepared: polysilicon wafers and single-crystalline silicon wafers with nickel film deposition.
3：List of Experimental Equipment and Materials:
A linear type CW laser (Nd:YAG), temperature-controlled heating unit, inductively coupled plasma (ICP), secondary ion mass spectrometry (SIMS), Hitachi SU-70 field-emission scanning electron microscope (FE-SEM).
4：Experimental Procedures and Operational Workflow:
Laser scanning was performed under controlled temperature and laser power, followed by etching and SIMS measurements.
5：Data Analysis Methods:
SIMS measurements were used to analyze the concentration of metal impurities before and after laser scanning.
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