研究目的
Demonstrating a micro-transfer-printed III-V-on-silicon distributed Bragg re?ector (DBR) laser using pre-processed III-V semiconductor optical ampli?ers (SOAs).
研究成果
The demonstration showcases the potential of micro-transfer-printing for realizing III-V-on-silicon photonic integrated circuits, achieving a waveguide-coupled output power of 6 mW at 1565 nm.
研究不足
The technique requires the capability to process III-V devices on large wafers and adapts the silicon photonics back-end process flow to accommodate the III-V devices.
1：Experimental Design and Method Selection:
The study employs micro-transfer-printing for integrating III-V devices on a silicon photonic wafer, combining advantages of flip-chip/pick-and-place integration and wafer bonding approaches.
2：Sample Selection and Data Sources:
Pre-fabricated III-V semiconductor optical amplifiers (SOAs) on a III-V source wafer are used.
3：List of Experimental Equipment and Materials:
Includes a PDMS stamp for printing, FeCl3:H2O etch for selective etching, and DVS-BCB bonding layer.
4：Experimental Procedures and Operational Workflow:
Involves releasing III-V devices from the source wafer, micro-transfer-printing onto a silicon photonic target wafer, and post-processing for electrical connection.
5：Data Analysis Methods:
Characterization of the DBR lasers includes measuring the L-I-V curve and analyzing the laser spectrum.
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