摘要： In this paper, we have investigated the effect of the work function of transparent conducting oxides (TCO) on the performance of a-Si:H p-i-n solar cells, including open circuit voltage (VOC), short circuit current (JSC), fill factor (FF) and conversion efficiency, using AFORS-HET software. The simulation has focused on two layers: front contact work function (ΦTCO-front) and back contact work function (ΦTCO-back) with various band energy gap from 4.7 eV to 5.3 eV and 4.2 eV to 4.9 eV respectively. From the simulation results, we know that the work function of TCO greatly affects the performance of solar cells such as Voc, Jsc, FF and conversion efficiency. By optimization, we arrive at results of Voc, Jsc, FF and conversion efficiencies of 0.88 V, 8.95 mA / cm2, 65% and 5.1% respectively, by using ΦTCO-front of 5.2 eV. When ΦTCO-front > 5.2 eV, the values of VOC, FF and conversion efficiency have been saturated, while the value of the J sc actually begins to decrease. Furthermore, when the ΦTCO - back is 4.3 eV, we get the best results for VOC, Jsc, FF and conversion Efficiency of 0.9 V, 8.96 mA / cm2, 73 % and 5.9 % respectively. When ΦTCO-back > 4.3 eV, the values of VOC, FF and conversion efficiency begin to decrease, while the value of the Jsc does not change significantly. These optimizations may help for producing low cost high efficiency p-i-n solar cells experimentally.