研究目的
Investigating the effects of adjusting the chirality in a continuous fiber manufacturing process using an FC-CVD method to obtain predominantly metallic or semiconducting single-walled carbon nanotubes.
研究成果
The study successfully demonstrated the control of SWCNT chirality through the addition of a mild etching agent (acetone) and tuning of carrier gas compositions during FC-CVD synthesis, achieving predominantly metallic or semiconducting SWCNTs. The findings suggest that etchant amount and carrier gas compositions are key factors in changing the structure of SWCNTs.
研究不足
The study highlights the challenge of continuous preparation of high-quality, high-purity metallic SWCNTs and the need for further optimization of the process conditions.
1：Experimental Design and Method Selection:
The study employed the floating catalyst chemical vapor deposition (FC-CVD) method for synthesizing SWCNTs with controlled chirality by varying carrier gas compositions and introducing acetone as an etchant.
2：Sample Selection and Data Sources:
SWCNTs were synthesized under different conditions of carrier gas (He, H2, Ar) and acetone flow rates to study their effects on chirality.
3：List of Experimental Equipment and Materials:
The synthesis involved the use of acetone as a mild etching agent and carbon precursor, with carrier gases He, H2, and Ar.
4：Experimental Procedures and Operational Workflow:
The process included the introduction of acetone during the FC-CVD process to control chirality, with Raman spectroscopy used to analyze the resulting SWCNTs.
5：Data Analysis Methods:
Raman spectra were analyzed to determine the chirality of the SWCNTs, with specific attention to the radial breathing mode (RBM) and the G band to D band intensity ratio (IG/ID).
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