研究目的
To develop a robust and efficient laser system for generating single-frequency continuous-wave lasers at 780.2 nm and 852.3 nm for applications in laser cooling, trapping, and manipulating Rb and Cs atoms, and in the formation of RbCs dimers.
研究成果
The study successfully demonstrates a simple, robust, and efficient scheme for generating high-power single-frequency continuous-wave lasers at 780.2 nm and 852.3 nm using PPMgO:LN bulk crystals and diode-laser-seeded fiber amplifiers. The system shows great potential for applications in atomic physics, including laser cooling, trapping, and the formation of RbCs dimers.
研究不足
The size of the device is large, and its mechanical stability could be improved with a more compact design. The scanning range is limited by the distributed feedback (DFB) diode laser.
1:Experimental Design and Method Selection:
The study employs single-pass second-harmonic generation (SHG) and sum-frequency generation (SFG) using PPMgO:LN bulk crystals and diode-laser-seeded fiber amplifiers.
2:Sample Selection and Data Sources:
The fundamental lasers at
3:5 nm and 0 nm are used for SHG and SFG, respectively. List of Experimental Equipment and Materials:
15 Includes PPMgO:LN crystals, fiber amplifiers, optical isolators, half-wave plates, polarization beam splitters, and temperature controllers.
4:Experimental Procedures and Operational Workflow:
The process involves generating
5:2 nm laser via SHG of 5 nm laser and 3 nm laser via SFG of 5 nm and 0 nm lasers, with temperature control for phase matching. Data Analysis Methods:
7 The output power and conversion efficiency are measured, and the beam quality is evaluated using the M2 parameter.
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