1：Experimental Design and Method Selection:

The study involved simulating exciton energy as a function of QW width and percent alloy contents using the Nextnanomat simulation program. Theoretical models were constructed based on the one-dimensional Schrodinger equation and electron effective mass approximation.

2：Sample Selection and Data Sources:

The structure consisted of a chirped superlattice GaAs/Al0.3Ga0.7As QCL with an AlAs monolayer inserted in the center of the QW. The GaAs QW was doped with Si at a concentration of 3×1010 cm-

3：3Ga7As QCL with an AlAs monolayer inserted in the center of the QW. The GaAs QW was doped with Si at a concentration of 3×1010 cm-List of Experimental Equipment and Materials:

2. 3. List of Experimental Equipment and Materials: Nextnanomat simulation program was used for conduction band profiles and envelope wave functions simulation.

4：Experimental Procedures and Operational Workflow:

Exciton energy was modeled as a function of QW width and percent alloy contents. Transition energy from electron subband levels to the 1s exciton state was investigated under an applied electric field.

5：Data Analysis Methods:

The dependence of exciton energy on QW width and percent alloy contents was analyzed. Transition energies were calculated self-consistently from the single-particle states equation, the excitonic many-body states equation, and Poisson’s equation.