研究目的
To realize the simple and rapid formation of porous silicon on a pillar array structure using inductively coupled plasma reactive ion etching (ICP-RIE) without additional etching or deposition apparatus.
研究成果
The proposed method successfully formed porous silicon on a pillar array structure using ICP-RIE, increasing the surface roughness by 48%. The method is efficient and can be applied to various fields utilizing porous silicon surface.
研究不足
The study focused on the formation of porous silicon on a pillar array structure using ICP-RIE. The limitations include the need for optimization of parameters to prevent over-etching and the potential for damage to the original structure.
1：Experimental Design and Method Selection:
The study used the Bosch process in ICP-RIE to form porous silicon on a pillar array structure. The method involved varying three parameters (bias power, chamber pressure, and gas flow rate) to determine the optimal etching condition.
2：Sample Selection and Data Sources:
A pillar array structure was fabricated on a silicon substrate with a thermal oxide film serving as a mask.
3：List of Experimental Equipment and Materials:
ICP-RIE (RIE-400iPB, Samco Inc., Japan), FE-SEM (S-4800, Hitachi High-Tech. Corp., Japan), EDX (Genesis V
4：44J, EDAX), SPM (AFM5500, Hitachi High-Tech. Corp., Japan). Experimental Procedures and Operational Workflow:
The process included cleaning the substrate, spin-coating photoresist, ultraviolet lithography, wet etching, and performing the Bosch process. Multicycle etching with an additional passivation step was performed to create porous silicon.
5：Data Analysis Methods:
The obtained shape was analyzed by EDX, and surface area and roughness were measured using SPM.
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