研究目的
To investigate the impact of multi-pulse laser annealing on highly phosphorus-doped silicon samples by analyzing the microstructure, phosphorus distribution, strain, and electrical properties before and after laser annealing.
研究成果
Multi-pulse laser annealing significantly reduces defects in recrystallized silicon and the EOR region without phosphorus diffusion, maintaining high strain and achieving nearly 100% phosphorus activation, making it effective for improving transistor performance.
研究不足
The study does not extensively explore the cause of strain relaxation in highly phosphorus-doped silicon, indicating a need for further research in this area.
1：Experimental Design and Method Selection:
The study applied single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon to analyze its effects on microstructure, strain, and electrical properties.
2：Sample Selection and Data Sources:
Phosphorus was implanted at 25 keV with a total dose of
3：5 × 1016 cm?2 on a p-type, (100) silicon wafer. List of Experimental Equipment and Materials:
A Varian high-current implanter, VIISTA80HP, and a Coherent COMPEX205 KrF pulse laser were used.
4：Experimental Procedures and Operational Workflow:
Laser annealing was conducted at energy densities of 450 and 600 mJ cm?2 with single- and multi-pulse modes. Microstructure, phosphorus distribution, strain, and electrical properties were analyzed post-annealing.
5：Data Analysis Methods:
TEM, TOF-SIMS, HR-XRD, and Hall effect measurements were used for analysis.
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KrF pulse laser
COMPEX205
Coherent
Used for laser annealing at energy densities of 450 and 600 mJ cm?2.
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HR-TEM
JEM-2100f
JEOL
Used for observing the microstructures of the as-implanted and laser-annealed samples.
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HR-XRD
SmartLab
Rigaku
Used for measuring the strain of the phosphorus implanted layer.
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Varian high-current implanter
VIISTA80HP
Varian
Used for phosphorus implantation at 25 keV with a total dose of 2.5 × 1016 cm?2.
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TOF-SIMS
ToF-SIMS 5
IONTOF
Used for analyzing the distribution of phosphorus in the recrystallized silicon and EOR region.
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Hall effect measurement system
HMS-5000
Ecopia
Used for determining the activated phosphorus concentration and electron mobility.
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