研究目的
To develop a technique for direct study of the distribution of the applied voltage within a quantum cascade laser (QCL) and to analyze the potential distribution in the laser claddings and laser core region.
研究成果
The developed KPFM technique provides valuable insights into the voltage distribution within QCLs, highlighting design and fabrication flaws. The GaAs-based QCL with AlInP claddings showed uneven potential distribution, while the InP-based QCL demonstrated a more predictable voltage drop across the laser core. This method can be instrumental in optimizing QCL design and epitaxial growth technology.
研究不足
The study is limited to two specific QCL structures and may not be generalizable to all QCL designs. The technique requires precise control of experimental conditions and may be affected by surface states and charge accumulation.
1：Experimental Design and Method Selection:
The study utilized gradient scanning Kelvin probe force microscopy (KPFM) to measure the potential distribution across the cleaved facets of two mid-infrared quantum cascade laser structures.
2：Sample Selection and Data Sources:
Two QCL structures were studied: an InGaAs/InAlAs device with InP claddings and a GaAs/AlGaAs device with AlInP claddings.
3：List of Experimental Equipment and Materials:
An NT-MDT NTegra Aura atomic force microscopy (AFM) setup was used in the regime of amplitude modulated gradient scanning Kelvin probe force microscopy (AM-GKPFM). Uncoated highly n-doped silicon NSG11 cantilevers were used for measurements.
4：Experimental Procedures and Operational Workflow:
Measurements were carried out at room temperature and at reduced pressure (~
5：1 mBar). The size of the cleaved ridge devices used in the KPFM experiments is 27 mm long and 20 μm wide for wafer MR2790, and 2 mm long and 20 μm wide for wafer MRData Analysis Methods:
The contact potential difference profiles were analyzed to understand the voltage distribution across the QCL structures.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
