研究目的
Investigating the influence of oxygen partial pressure on the UV photodetector performance of WO3 thin films.
研究成果
The WO3 thin film deposited at 10% of pO2 condition is suitable for UV-A photodetector with high photocurrent and quick rising times due to its higher oxygen vacancies, good crystallinity, and larger grain size.
研究不足
The study is limited to the effects of oxygen partial pressure on WO3 thin films' photodetector performance. Other deposition parameters like substrate temperature and deposition time were kept constant, which might also influence the photodetector properties.
1：Experimental Design and Method Selection:
WO3 thin films were deposited onto Si/SiO2 wafers by a direct current (DC) reactive magnetron sputtering technique at various oxygen partial pressures (pO2: 5%-20%).
2：Sample Selection and Data Sources:
The thickness of WO3 thin films was measured by spectroscopic ellipsometry. Structural properties were analyzed by X-ray diffraction (XRD), chemical states by X-ray photoelectron spectroscopy (XPS), and morphology by field emission scanning electron microscopy (FE-SEM).
3：List of Experimental Equipment and Materials:
Spectroscopic ellipsometry (M2000D, Woollam model), XRD (D/Max-2500 model), XPS (K-alpha model), FE-SEM (FEI Quanta FEG 200), parameter analyzer (HP4156A, Hewlett Packard), UV-LED light source, lock-in amplifier (Model, SR830 DSP Lock-in Amplifier), optical chopper (Model, SR540 Chopper Controller).
4：Experimental Procedures and Operational Workflow:
Ti metal electrodes were deposited onto WO3 surface for photodetector properties measurement. I-V characteristics were studied under dark and UV-LED illuminations. Photocurrent measurements were carried out at different UV-LED power densities.
5：Data Analysis Methods:
The photocurrent, responsivity, and detectivity were calculated through their standard formulas.
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Spectroscopic ellipsometry
M2000D
Woollam
Measuring the thickness of WO3 thin films
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Field emission scanning electron microscopy
FEI Quanta FEG 200
FEI
Characterizing the morphology/microstructure of the WO3 films
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X-ray diffraction
D/Max-2500
Analyzing the structural properties of WO3 films
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X-ray photoelectron spectroscopy
K-alpha
Characterizing the chemical state and binding energies of WO3 thin films
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Parameter analyzer
HP4156A
Hewlett Packard
Studying the current-voltage (I-V) characteristics
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Lock-in amplifier
SR830 DSP Lock-in Amplifier
Measuring the photocurrent of WO3 films
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Optical chopper
SR540 Chopper Controller
Controlling the illumination of UV-LED light
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