研究目的
Investigating the epitaxial growth of NixMg1-xO films on MgO(100) surface and determining the band alignment at the NixMg1-xO/MgO interface for solar-blind device applications.
研究成果
Single crystalline NixMg1-xO films were successfully synthesized on MgO(100) surface using LMBE. The band alignment at the NixMg1-xO/MgO interface was determined, showing a type-I alignment. The work functions of NixMg1-xO films were found to range from 4.33 eV to 4.64 eV. This study provides guidance for the design and fabrication of solar-blind devices.
研究不足
The study focuses on the epitaxial growth and band alignment of NixMg1-xO films on MgO substrates. The theoretical calculation and experimental measurement with the absorption coefficient for valence electronic structure and surface electronic properties were not included.
1：Experimental Design and Method Selection:
The NixMg1-xO films were deposited on MgO(100) substrates by laser molecular beam epitaxy (LMBE) using a KrF excimer laser at 248 nm. The growth process was monitored by an in situ high-pressure RHEED system.
2：Sample Selection and Data Sources:
MgO(100) substrates were used, annealed at 600°C for 60 min under background vacuum to clean the surface.
3：List of Experimental Equipment and Materials:
LMBE system, KrF excimer laser, RHEED system, X-ray photoelectron spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), X-ray diffraction (XRD).
4：Experimental Procedures and Operational Workflow:
The films were deposited under different O2 background pressures. The growth speed and Ni content were measured. The band alignment and work function were determined using XPS and UPS.
5：Data Analysis Methods:
The valence band offsets were calculated using Kraut’s method. The work function was determined from UPS spectra.
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