研究目的
Investigating the effect of amplified spontaneous emission pedestal at relativistically intense laser interaction with nanostructured solid targets.
研究成果
The laser melting threshold of nanostructured solid targets was found to be significantly lower than for flat substrates, depending on the production method of the structures. This is attributed to increased absorption and suppressed heat transfer into the bulk. The findings are important for relativistically intense ultrashort interactions with nanostructured targets, where the prepulses can strongly affect the nanomodifications on the surface.
研究不足
The study is limited by the precision of laser fluence estimation and the quality of the target surface. The effect of contaminations and polishing quality on the melting threshold is also a limitation.
1：Experimental Design and Method Selection:
The study involved focusing sub-nanosecond laser radiation onto the surface of different flat and nanostructured targets to model the action of the prepulse.
2：Sample Selection and Data Sources:
Four types of targets were used: flat tungsten substrate, flat silicon wafer, silicon nanostructures obtained by metal-assisted chemical etching, and germanium nanowires obtained by electrochemical deposition.
3：List of Experimental Equipment and Materials:
A Ti:Sapphire CPA laser system at a central wavelength of 805 nm was used, bypassing the final compressor. The radiation was focused by a 10 cm focal length off-axis gold coated parabolic mirror.
4：Experimental Procedures and Operational Workflow:
Each spot on the target was irradiated by a single pulse and then displaced to ensure the interaction of the next pulse with a clear area.
5：Data Analysis Methods:
The melting threshold was estimated according to the absence of signs of melting at the SEM image.
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