研究目的
Investigating the fabrication and characterization of graphene-tungsten disulfide heterojunction for enhanced photoresponse and surface charge transfer mechanism.
研究成果
The fabrication and characterization of 2D material's based van der Waal heterostructure FET demonstrates controllable Fermi level and high mobility of graphene with remarkable optical properties of WS2. The study shows enhanced photoresponse and charge transfer mechanism, suggesting potential for future electronic and optoelectronic devices.
研究不足
The study focuses on the specific combination of graphene and tungsten disulfide, and the effects of DUV irradiation, which may not be generalizable to other materials or light sources.
1：Experimental Design and Method Selection:
Fabrication of van der Waal heterostructure by selective coverage of graphene with tungsten disulfide. Electrical transport measurements to study charge carriers in graphene after WS2 coverage. Photoelectrical characterization to calculate detectivity, external quantum efficiency, and photoresponsivity.
2：Sample Selection and Data Sources:
CVD grown graphene on Copper foil and WS2 flakes exfoliated by scotch tape method.
3：List of Experimental Equipment and Materials:
Renishaw Micro-Spectrometer for Raman spectra, electron beam lithography for patterning, thermal evaporation for metallic contacts.
4：Experimental Procedures and Operational Workflow:
Transfer of graphene to SiO2/Si substrate, deposition of WS2 flakes, photolithography and reactive ion etching, patterning by electron beam lithography, and thermal evaporation for contacts.
5：Data Analysis Methods:
Raman spectroscopy for quality examination of Gr and WS2, electrical transport measurements under DUV treatment, photoelectrical characterization.
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