研究目的
To propose a more advanced approach for thermal profile mapping as well as lifetime estimation of wind power converter based on the failure mechanism of power semiconductor devices, i.e., thermal stress generation and lifetime models, and a more complete mission profile of wind power converter are processed considering different time constants.
研究成果
The proposed comprehensive lifetime estimation method for power semiconductors in wind power converter, based on thermal cycling and corresponding strength models inside power devices, separates the analysis under different time constants of thermal behaviors. This method provides detailed lifetime information useful for indicating and improving system reliability performance. The estimated thermal behaviors are validated experimentally.
研究不足
The lifetime models provided by manufacturers are based on accelerated tests covering limited ranges of thermal cycles, leading to potential inaccuracies in lifetime estimation for untested conditions.