研究目的
To achieve high performance in CdTe solar cells through improved light capture and decreasing the carrier recombination for charge transport and photon absorption by incorporating metal selenide thin films as the secondary absorber.
研究成果
Ternary CdSexTe1-x alloy thin films were effective in extending the long-wavelength QE response when used as a secondary absorber in CdTe solar cells. Higher substrate temperatures during CdTe deposition improved crystal quality and grain size, reducing carrier recombination and enhancing device performance. The study demonstrated the potential of metal selenide thin films to improve CdTe solar cell efficiency.
研究不足
The study did not introduce the device structure involving copper-containing or copper as the primary back contact, which might affect the device performance. The grain boundaries and interface between the absorption layer and the back electrode could still restrict carrier collection.
1：Experimental Design and Method Selection:
The study involved the preparation of metal selenides (CdSe, CdSexTe1-x) and their application in CdTe solar cells to investigate their role as secondary absorption layers. The devices were fabricated with a structure of FTO/CdS/metal selenide/CdTe/Au.
2：Sample Selection and Data Sources:
TEC-15 FTO glass was used as the substrate. CdS was deposited by chemical bath deposition, and metal selenide layers were prepared by sputtering (CdSe) or close-spaced sublimation (CdSexTe1-x). CdTe was deposited by CSS.
3：List of Experimental Equipment and Materials:
Equipment included a sputtering system, CSS system, ultrasonic atomizer, tube furnace, and vacuum thermal evaporator. Materials included CdSe and CdSexTe1-x powders, CdCl2 solution, and Au for the back electrode.
4：Experimental Procedures and Operational Workflow:
The process involved cleaning the FTO glass, depositing CdS, preparing the metal selenide layer, depositing CdTe, applying CdCl2 treatment, etching the back surface, and depositing the Au electrode.
5：Data Analysis Methods:
Structural properties were analyzed by XRD, surface morphologies by SEM, compositional properties by EDS, optical transmission by UV/VIS/NIR spectrometer, and device performance by J-V measurements, QE measurements, dark J-V, dark C-V, MCE, T-I-V, and TRPL measurements.
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Agilent 4155C semiconductor parameter analyzer
4155C
Agilent
Dark current-voltage and dark capacitance-voltage measurements
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FTO glass
TEC-15
Pilkington
Substrate for solar cell fabrication
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CdSe target
Chengdu Ultra-Pure Applied Materials
Source material for sputtering CdSe layers
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CdSexTe1-x powders
CdSe0.2Te0.8 and CdSe0.4Te0.8
KYD Materials
Source material for CSS deposition of CdSexTe1-x layers
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CdTe powder
KYD Materials
Source material for CSS deposition of CdTe layers
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X-ray diffractometer
Structural properties analysis
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SEM
Surface morphologies observation
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UV/VIS/NIR spectrometer
Optical transmission measurement
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QEX10
QEX10
PV Measurement, Inc.
QE measurements
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LEDs
Thorlabs
Monochromatic light collection efficiency measurements
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