研究目的
The aim of this work is to offer a pioneering characterization of laser annealing effects on implanted SiC with particular concern to phase separation energy thresholds related to SiC non-congruent melting. We perform an effective study of the exploitable XeCl laser energies, as well as an atomic scale characterization that confirms the complete 4H polytype maintenance under sub-melting regime.
研究成果
The XeCl multi-laser pulses system is able to recover implantation damage. Laser treated samples present a lower defect optical signal by a factor up to 8–9 compared to thermally annealed samples. This shows that the laser pulse acting in a non-equilibrium regime and taking advantage of rapid annealing and cooling ramps is able to recover implantation damage generating a lower point defects concentration. Laser annealing constitutes, with suitable precautions, a viable way as a post-implant thermal process.
研究不足
Surface etching phenomena are due both to Si atoms desorption already known in conventional thermal annealing and to oxidation phenomena occurring inside the chamber in the presence of O.
1：Experimental Design and Method Selection:
The study involved the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. The methodology included micro-Raman spectroscopy, Photoluminescence (PL), and Transmission Electron Microscopy (TEM) for characterization.
2：Sample Selection and Data Sources:
Experimental activity was conducted on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were compared with those coming from P implanted thermally annealed samples.
3：List of Experimental Equipment and Materials:
A LPX 300 XeCl pulsed excimer laser (λ = 308 nm, Lambda Physics, G?ttingen, Germany) with 40 Hz repetition rate was used. Other equipment included a MicroLas Lasersystem attenuator unit, a LabRAM HR spectrofluorimeter (Horiba Jovin Yvon, Kyoto, Japan), and a 2010F Jeol microscope (Tokyo, Japan) equipped with a Gatan image filter for electron energy loss spectroscopy (EELS).
4：Experimental Procedures and Operational Workflow:
Laser treatments were carried out inside a chamber under helium atmosphere. Samples were irradiated by a 1 mm × 20 mm uniform intensity profile radiation. Substrate holder inside the chamber was heated at a temperature of 580 °C and a mobile stage allowed to implement an irradiation process until 1000 shots/point.
5：Data Analysis Methods:
The effectiveness of laser treatments was verified by micro-Raman and photoluminescence analysis. Structural investigation was performed using TEM microscopy.
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