摘要： Although all-inorganic lead halide perovskite solar cells have shown tremendous improvement over the past few years, they are still inferior to the hybrid organic-inorganic perovskites in the solar power conversion efficiency. Recently, a conceptually new β-CsPbI3 perovskite has demonstrated an impressive 18.4% efficiency combined with good thermodynamic stability at ambient conditions. We use ab initio non-adiabatic molecular dynamics to show that native point defects in β-CsPbI3 are generally benign for nonradiative charge recombination, regardless of whether they introduce shallow or deep trap states. Moreover, formation of new covalently bound species in the presence of defects slows down the recombination. These results indicate that halide perovskites do not follow the simple models used to explain defect-mediated charge recombination in the conventional semiconductors. The strong tolerance of electron-hole recombination against defects arises due to the softness of the perovskite lattice, which permits separation of electrons and holes upon defect formation, and allows only low-frequency vibrations to couple to the electronic subsystem. Both factors decrease significantly the non-adiabatic coupling and slow down the dissipation of electronic energy to heat. We suggest that a halide-rich synthesis environment may further improve the efficiency, and propose that strong defect tolerance is general to metal halide perovskites because they exhibit much lower bulk moduli compared to the conventional semiconductors used in photovoltaic, photocatalytic, electrocatalytic, lasing, light-emitting, detecting and other opto-electronic devices.