研究目的
To achieve low-cost fabrication of organic field-effect transistors (OFETs) using a solution-based process that is vacuum-free and operates at room temperature, utilizing carbon nanotube (CNT) as source/drain electrodes and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as a semiconducting layer.
研究成果
The study demonstrates a facile and scalable fabrication of solution-processed OFETs using CNT as source/drain electrodes and C8-BTBT as a semiconducting layer. The fabricated devices show typical p-channel behavior with good compatibility with various substrates, making the process suitable for next-generation electronics and sensors.
研究不足
The mobility value of the CNT electrode-based OFET is smaller than that of OFETs utilizing gold electrodes due to the lower work function of CNT, resulting in higher contact resistance and lower mobility. The process may require further optimization to improve device performance.
1：Experimental Design and Method Selection:
The study employs a dip coating-based directed assembly process for fabricating CNT source/drain electrodes and C8-BTBT semiconducting films. The process is chosen for its ability to control film thickness and crystallinity by adjusting pulling speed and solution concentration.
2：Sample Selection and Data Sources:
Silicon substrates with a 300 nm thermal oxide layer and flexible, transparent polyethylene terephthalate (PET) substrates are used. CNT electrodes and C8-BTBT films are assembled on these substrates.
3：List of Experimental Equipment and Materials:
Equipment includes an oxygen plasma system (Anatech SP-100), dip coater (KSV instruments), optical photolithography setup, SEM (Supra 25, Zeiss), AFM (Park Systems NX 20), and a semiconductor parameter analyzer (HP 4156C, Agilent Technologies). Materials include multi-walled carbon nanotubes (MWNTs) from Brewer Science and C8-BTBT powders from Sigma–Aldrich.
4：Experimental Procedures and Operational Workflow:
The process involves oxygen plasma treatment of substrates, photolithographic patterning, dip coating-based directed assembly of CNTs, stripping of photoresist, and dip coating-based assembly of C8-BTBT films. Parameters such as pulling speed and solution concentration are optimized for film thickness.
5：Data Analysis Methods:
The electrical characteristics of the OFETs are analyzed using a semiconductor parameter analyzer. Film morphology and thickness are assessed using AFM and SEM.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
