研究目的
To fabricate CsPbBr3 PQD-LEDs with an atomic layer deposited interlayer to protect the PQDs from polar solvent damage during ZnO spin-coating and improve device performance.
研究成果
A dual Al2O3 and ZnO ALD interlayer was proposed as a solution, achieving a luminance of 2000 cd/m2 and current efficiency of 0.5 cd/A. The interlayer protected the CsPbBr3 PQD surface from butanol exposure without damaging the PQDs.
研究不足
The insulating nature of Al2O3 resulted in an increase in the turn-on voltage and a low power efficiency of the CsPbBr3 PQD-LEDs. Significant PL quenching and redshift were observed when the ALD ZnO was deposited on the CsPbBr3 PQD surface.
1：Experimental Design and Method Selection:
CsPbBr3 PQDs were synthesized and PQD-LED devices were fabricated via a solution process by adding Al2O3 and ZnO interlayers deposited via ALD. A standard structure ITO/TFB:F4TCNQ/CsPbBr3 PQDs/ultra-thin ALD Al2O3 or ZnO/ZnO/Al was suggested to suppress polar solvent damage during ZnO spin-coating.
2：Sample Selection and Data Sources:
CsPbBr3 PQDs dispersed in octane were prepared following a previously reported method. The samples were characterized using SEM, PL spectra, and device performance measurements.
3：List of Experimental Equipment and Materials:
ALD chamber (Lucida, D100), SEM (Hitachi S-4800), PL spectrometer (Horiba FluoroMax), and thermal evaporator for Al cathode deposition.
4：Experimental Procedures and Operational Workflow:
The synthesis of CsPbBr3 PQDs, device fabrication with ALD interlayers, and characterization of device performance and PQD films.
5：Data Analysis Methods:
Analysis of SEM images, PL spectra, and device performance metrics such as luminance, current density, and efficiency.
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