研究目的
Investigating the transition from hopping to band-like transport in weakly-coupled multilayer MoS2 field effect transistors.
研究成果
The study demonstrates that weakly-coupled multilayer MoS2 FETs exhibit enhanced mobility and on/off ratios compared to monolayer devices, attributed to the transition from hopping to band-like transport in the upper layers. This provides a pathway for high-performance 2D material-based electronics.
研究不足
The study is limited by the quality of the CVD-grown MoS2 and the transfer process, which may introduce defects or contamination. The model assumes simplified interlayer resistance and does not account for all possible scattering mechanisms.
1：Experimental Design and Method Selection:
The study involves the fabrication of back-gate MoS2 FETs with different numbers of layers (1, 2, and 3) using a multiple-transfer process of CVD-grown monolayer MoS
2：The electrical properties were studied through temperature-dependent measurements and a distributed resistance model was proposed to understand the conductivity mechanism. Sample Selection and Data Sources:
Monolayer MoS2 was grown on SiO2/Si substrates by CVD and transferred to HfO2/Si substrates for device fabrication.
3：List of Experimental Equipment and Materials:
AFM for thickness measurements, Raman and PL spectroscopy for optical characterization, and Agilent B1500A parameter analyzer for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The transfer process was repeated to obtain samples with different numbers of layers. Devices were fabricated with Ti/Au contacts and characterized electrically.
5：Data Analysis Methods:
The mobility and on/off ratio were extracted from transfer curves. A resistance network model was used to simulate current distribution in bilayer MoS2.
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