摘要： Quantum dots (QD) tend to exhibit low photoluminescence (PL) properties due to long hanging ligands on their surface and steric barriers resulting therefrom. On the other hand, in order to be used in QD LED and QDSSC technologies, highly intense PL characteristics and PL lifetime are required respectively. Therefore, this study focuses on increasing the PL QY and PL lifetime of CdSeTe alloy QDs. To achieve this aim, CdSeTe alloy QDs synthesized by organometallic method were treated with different mass % (m/m) chloride solution. The PL Quantum Yield (PL QY) of CdSeTe alloy QDs, which was 13.2 ± 2.0% before treatment, increased to 97.4 ± 2.0% after treatment with 60% CdCl2 solution approaching to almost unity value. In addition to the increase in PL QY, PL lifetime increased from 28 ns to 33 ns with chloride treatment. However, thanks to surface passivation, the time to fall to half the value of PL QY for treated CdSeTe(Cl) QDs under oxygen exposure was increased from 10 h to 64 h. In the study, the absorbance and emission characterizations of CdSeTe alloy QDs treated with chloride and untreated, were presented.