摘要： Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) exhibit high field-effect carrier mobility and low off-state current, which are attractive for high speed and low noise photodetectors and image sensor applications. However, with an optical band gap of ~3.3 eV, the photodetection range of IGZO TFTs is limited to short wavelength ultraviolet (UV) light. Here, we demonstrate a simple approach to enhance the performance of IGZO-based phototransistors by incorporating layers of solution-processed perovskite quantum dots (QDs) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Owing to the fast transfer of photogenerated electrons by CsPbBr3 QDs absorbing layer, the photoresponse of QD-decorated IGZO phototransistor is extended to the visible range (500 nm), and the responsivity and detectivity of QD-decorated device are more than two order higher than those of original IGZO TFTs. Moreover, the QD-decorated IGZO phototransistor also exhibits enhanced performance under UV light (350 nm), achieving a responsivity of 9.72 A/W, a detectivity of 2.96 × 1012 Jones, and a light to dark current ratio in the order of 106 at a wavelength of 350 nm (a light intensity of 207.3 μW/cm2).