研究目的
Investigating the performance enhancement of GeSn/Ge dual-nanowire photodetectors with extended detection wavelength and reduced dark current through ferroelectric polymer side gating.
研究成果
The GeSn/Ge dual-nanowire photodetector demonstrates extended detection wavelength up to 2.2 μm and significantly reduced dark current when integrated with a ferroelectric polymer side gate. This approach offers a promising pathway for developing high-performance, Si-compatible optoelectronic devices for short-wavelength infrared applications.
研究不足
The study focuses on the fabrication and initial characterization of GeSn/Ge dual-nanowire photodetectors. Potential limitations include the scalability of the MBE process for large-scale production and the long-term stability of the ferroelectric polymer side gate under operational conditions.
1：Experimental Design and Method Selection:
The study involves the synthesis of GeSn/Ge dual-nanowires via a two-step molecular beam epitaxy (MBE) process, followed by the fabrication of photodetectors with ferroelectric polymer side gates.
2：Sample Selection and Data Sources:
GeSn/Ge dual-nanowires were synthesized on graphene substrates using In as a catalyst, with characterization performed using TEM, EDX, and Raman spectroscopy.
3：List of Experimental Equipment and Materials:
Equipment includes a DCA P450 MBE system, SEM (HITACHI-S4700), AFM (Bruker, Multimode 8), and Raman spectroscopy (HORIBA Jobin Yvon HR800). Materials include Ge, Sn, and P(VDF-TrFE) ferroelectric polymer.
4：0). Materials include Ge, Sn, and P(VDF-TrFE) ferroelectric polymer. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The process involves nanowire growth, device fabrication using electron-beam lithography, and optoelectronic measurements.
5：Data Analysis Methods:
Data analysis includes EDX mapping for composition analysis and electrical characterization of photodetector performance.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
Probe station
TTPX
Lake Shore
Optoelectronic measurements of nanowire devices.
暂无现货
预约到货通知
-
Semiconductor characterization system
4200
Keithly
Optoelectronic measurements of nanowire devices.
暂无现货
预约到货通知
-
SEM
HITACHI-S4700
HITACHI
Characterization of the morphologies of GeSn/Ge dual-nanowires.
暂无现货
预约到货通知
-
AFM
Multimode 8
Bruker
Characterization of the morphologies of GeSn/Ge dual-nanowires.
暂无现货
预约到货通知
-
Raman spectroscopy
HR800
HORIBA Jobin Yvon
Estimation of Sn concentration in GeSn/Ge dual-nanowire.
暂无现货
预约到货通知
-
STEM
JEM-ARM300F
JEOL
Characterization of the crystalline structure and composition of GeSn/Ge dual-nanowires.
暂无现货
预约到货通知
-
Electron-beam lithography system
Sigma
Zeiss
Definition of areas for drain, source, and side-gated electrodes in device fabrication.
立即获取同款设备 -
DCA P450 MBE system
P450
DCA
Used for the synthesis of GeSn/Ge dual-nanowires via a two-step molecular beam epitaxy process.
暂无现货
预约到货通知
-
E-beam metal evaporation system
Kurt J. Lesker
Deposition of Cr/Au electrodes.
暂无现货
预约到货通知
-
登录查看剩余7件设备及参数对照表
查看全部
