摘要： In this paper, .an accurate analytical model has been developed to optimize the performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal semiconductor fitness function for the multi objective optimization (MOGA) approach. The optimized sensitivity and speed performances was executed. Our results confirm the excellent ability of the suggested Graphene electrode system to decrease the unwanted shadowing effect. A responsivity of 238 μA/W was obtained under 325-nm illumination compared to the 16.7 μA/W for the conventional Cr-Pd/p-SiC PD. A photocurrent to- dark-current ratio (PDCR) of 5.75 × 105 at 300K and 270 at 500K was distinguished. The response time was found to be around 14 μs at 300K and 54.5 μs at 500K. Furthermore, the developed model serves as a fitness function to recognize the IGE formalism pattern which permits the enhancement of the performance of the proposed Gr/4H-SiC IE MSM PD using MOGA-based technique. The achieved results indicate that the suggested design methodology not only permits to realize a superior compromise amid responsivity and response time, but also shed light on the proposed device’s ruggedness under high temperature conditions. This opens the way to realize ultra-sensitive, high-speed SiC optoelectronic devices for extremely high temperature applications.