研究目的
Investigating the growth of BaSi2 film on Ge(100) substrate by vacuum evaporation and its photoresponse properties for potential application in thin-film solar cells.
研究成果
A single-phase polycrystalline orthorhombic BaSi2 film was successfully grown on a Ge substrate by evaporation, showing promising photoresponse properties for thin-film solar cells. The quality of the a-Si film significantly affects the BaSi2 film quality, with higher substrate temperatures during a-Si deposition leading to better film properties and higher photoresponsivity.
研究不足
The study notes that the photoresponse signal of the evaporated film grown on Ge is still lower than that of films grown by MBE, and no photoresponse was found without an applied voltage, indicating potential issues with defect density and film quality.
1：Experimental Design and Method Selection:
The study employed vacuum evaporation to grow BaSi2 films on Ge(100) substrates, with prior deposition of an amorphous Si (a-Si) film to control stoichiometry.
2：Sample Selection and Data Sources:
P-type (100) Ge substrates were used, cleaned and prepared with a-Si films deposited at various substrate temperatures.
3：List of Experimental Equipment and Materials:
SEM for morphology observation, Raman spectroscopy and XRD for crystalline quality characterization, μ-PCD for carrier lifetime evaluation, and sputtering for ITO and Al film deposition.
4：Experimental Procedures and Operational Workflow:
a-Si films were deposited at different temperatures, followed by BaSi2 evaporation at 500°C. Photoresponse was measured under reverse bias.
5：Data Analysis Methods:
The crystalline quality was analyzed using XRD and Raman spectroscopy, carrier lifetime by μ-PCD, and photoresponse properties under monochromatic light.
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