摘要： In this work, undoped semiconductors, germanium (Ge) and germanium tin (GeSn), were grown on ferrimagnetic insulator yttrium iron garnet (YIG) thin ?lms using ultra-high vacuum molecular beam epitaxy. The crystallinity of the structure was determined from x-ray diffraction and high-resolution transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Both spin pumping and inverse spin Hall effects (ISHEs) of YIG/Ge and YIG/GeSn heterojunctions have been investigated with the help of broadband ferromagnetic resonance (FMR). We observe that the spin mixing conductances of YIG/Ge (60 nm) and YIG/GeSn (60 nm) are 5.4 (cid:2) 1018 m(cid:3)2 and 7.2 (cid:2) 1018 m(cid:3)2, respectively, responsible for giant spin current injection. Furthermore, it is found that spin pumping injects giant spin current from ferrimagnetic YIG into the Ge semiconductor. The infrared laser modulated ISHE was examined using heavy metal platinum as a spin current collector. Also, it has been noted that the variation in the power of laser irradiation signi?cantly changed the ISHE voltage of YIG/Ge/Pt spin junctions, saturated magnetization, FMR linewidth, and Gilbert damping parameter of YIG, which could be attributed to the laser-induced thermal effect. The outcomes from this study are promising for the development of Ge-based spintronic and magnonic devices.