研究目的
To propose and fabricate a two-dimensional quantum dot array with word/bit lines that allows random access for arbitrary quantum dots with a small number of control signals, enhancing electrostatic coupling for large-scale integration.
研究成果
The proposed 2D quantum dot array with word/bit lines demonstrates quantum dots with an allowable voltage window of 0.2 V, significantly wider than previous works. This structure is promising for the practical use of large-scale quantum computers.
研究不足
The study focuses on the fabrication and initial characterization of the quantum dot array. Further work is needed on quantum gate operation processing and spin operation technology.
1：Experimental Design and Method Selection:
The study involves designing a 2D quantum dot array with word/bit line control using silicon-complementary-metal-oxide-semiconductor technology with an alternating dual-standard gate oxide thickness.
2：Sample Selection and Data Sources:
Undoped Si channels on a silicon-on-insulator substrate are used.
3：List of Experimental Equipment and Materials:
Includes a scanning electron microscope (SEM) for observing the cross sections of the fabricated 2D quantum dot array.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves forming undoped Si channels, depositing gate oxide films, forming poly-Si gates, and creating word and bit lines.
5：Data Analysis Methods:
The electric specifications of quantum dots are estimated from capacitances between each quantum dot and gate electrode.
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