研究目的
Investigating the uneven crystallization of a-Si and a-Si:Ag thin films irradiated by femtosecond laser and the role of Ag nanoparticles in inhibiting crystallization.
研究成果
The study demonstrates uneven crystallization in a-Si and a-Si:Ag thin films irradiated by femtosecond laser, with crystallization weakening from the center to the edge of the laser spot. Ag nanoparticles inhibit the crystallization of a-Si in a-Si:Ag films, suggesting a need for further research on controlling crystallization in such materials.
研究不足
The study is limited by the Gaussian energy distribution of the femtosecond laser beam, which causes uneven crystallization. The short duration of femtosecond laser pulses may also limit the time available for crystallization processes.
1：Experimental Design and Method Selection:
The study involved irradiating a-Si and a-Si:Ag thin films with a femtosecond laser to observe crystallization patterns. Optical microscopy and Raman spectroscopy were used to analyze the results.
2：Sample Selection and Data Sources:
a-Si:Ag and a-Si thin films were deposited on K9 substrates using a radio frequency (RF) co-sputtering system.
3：List of Experimental Equipment and Materials:
A mode-locked Ti:sapphire laser (Solstice?), optical microscope (MV5000), Panalytical X’pert High Score XRD instrument, RENISHAW inVia Raman Microscope, and JSM-7500F scanning electron microscope were used.
4：Experimental Procedures and Operational Workflow:
Films were irradiated under controlled conditions, and their properties were analyzed using the aforementioned instruments.
5：Data Analysis Methods:
Raman spectra and XRD spectra were analyzed to study the crystallization patterns and the effect of Ag nanoparticles.
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