研究目的
To prepare high electrical conductivity graphene/epitaxial-3CeSiC (G/epi-3CeSiC) composite films through laser chemical vapor deposition (LCVD) for applications in harsh environments.
研究成果
G/epi-3CeSiC composite films with high electrical conductivity were successfully prepared by LCVD. The highest electrical conductivity achieved was 2.23 (cid:1) 104 S/m, with a deposition rate significantly higher than previously reported. The study also demonstrated the elimination of carbon to improve the breakdown field intensity and decrease leakage current in heterojunctions.
研究不足
The study focuses on the preparation and electrical performance of G/epi-3CeSiC composite films, with limited discussion on other potential applications or the scalability of the process.
1：Experimental Design and Method Selection:
The study utilized a homemade cold-wall type LCVD system to prepare epitaxial films. Hexametyldisilane (HMDS) was used as a safe single precursor.
2：Sample Selection and Data Sources:
Si (111) single-crystal was used as a substrate. HMDS was carried by Ar to the chamber, with H2 as dilution gas.
3：List of Experimental Equipment and Materials:
A diode continuous laser beam was used for heating. The substrates were heated to deposition temperatures monitored by an infrared pyrometer.
4：Experimental Procedures and Operational Workflow:
The substrates were heated to deposition temperature, maintained for a deposition time of 10 min, then cooled to room temperature.
5：Data Analysis Methods:
The crystal phase and in-plane orientation relationship were examined by X-ray diffraction and pole figure. Raman spectrometer, FESEM, EDX, and TEM were used for further analysis.
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Field emission scanning electron microscopy (FESEM)
Quanta-250
FEI
Used for observing the surface and cross-section morphology.
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Transmission electron microscopy (TEM)
JEOL JEM-2100
JEOL
Used for detailed information observation of the films.
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Infrared pyrometer
CT laser
Optris
Used for monitoring the substrate temperature.
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X-ray diffraction (XRD)
Rigaku Ultima III
Rigaku
Used for examining the crystal phase and in-plane orientation relationship.
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Si (111) single-crystal
15 mm (cid:1) 10 mm (cid:1) 0.5 mm
Hefei Kejing Inc.
Used as a substrate for the deposition of films.
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Hexametyldisilane (HMDS)
Tokyo Chemical Inc.
Used as a safe single precursor for the preparation of G/epi-3CeSiC composite films.
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Ar
Wuhan Xiangyun Chemical Co., Ltd.
Used as a carrier gas for HMDS.
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H2
Wuhan Xiangyun Chemical Co., Ltd.
Used as dilution gas.
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Diode continuous laser beam
InGaAlAs, l ? 1060 nm, 20 mm in diameter
Beijing ZK laser
Used for heating the substrates.
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Raman spectrometer
InVia
Renishaw
Used for Raman spectra measurements.
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