研究目的
Investigating the electroluminescence quantum efficiency roll-off in iridium(III)-based complexes utilized as near-infrared emitters in organic light-emitting diodes.
研究成果
The efficiency roll-off in NIR-emissive OLEDs based on Ir(iqbt)2(dpm) and Ir(iqbt)3 complexes is mainly controlled by the triplet-triplet exciton annihilation, with the interaction between triplets of iridium emitters and the host matrix found as being less probable. The relevant rate constant was found to be (0.5 ? 12) × 10?12 cm3/s, considered rather too high for disordered organic systems, which was assigned to the simplicity of the applied model.
研究不足
The simplicity of the applied model and the coexistence of some other mechanisms with a less significant contribution to the overall emission quenching.
1:Experimental Design and Method Selection:
The study involved measuring and analyzing the electroluminescence quantum efficiency roll-off in NIR-emissive OLEDs based on Ir(iqbt)2(dpm) and Ir(iqbt)3 complexes. The double-layer solution-processed structure with emitters embedded in the PVK-OXD7 host matrix, as well as the analogous three-layer one extended by a carrier-conducting PVK film, were investigated.
2:Sample Selection and Data Sources:
The NIR-emitting complexes, Ir(iqbt)2(dpm) and Ir(iqbt)3, were synthesized according to the methods reported in the papers [10,14].
3:4].
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The devices utilized ITO glasses with deposited 50 nm-thick films of PEDOT:PSS to form the anodes, and Ba/Al (7/100 nm) vacuum-evaporated cathodes. The active layers were formed using mixtures of PVK, OXD7, and the iridium complexes.
4:Experimental Procedures and Operational Workflow:
The device preparation processes were performed in nitrogen atmosphere using a M-Braun glovebox system. The light emitting layers for two-layer devices were fabricated using a spin-coating technique.
5:Data Analysis Methods:
The EL spectra were recorded at room temperature under a constant bias applied to the devices using a Spex CCD detector. The current–voltage (I–V) device characterization was performed with a Keithley 2602 source meter. The EQEs were determined by recording the OLED forward-direction emissions, assuming the Lambertian intensity profile.
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