研究目的
Investigating the design, modeling, micro-fabrication, and characterization of an ultra-broadband Ge-on-Si waveguide polarization rotator for mid-infrared applications.
研究成果
The Ge-on-Si waveguide polarization rotator demonstrates significant improvements in bandwidth and insertion loss, offering a practical solution for mid-infrared applications. Its fabrication tolerance and simplicity make it a promising component for integrated photonic circuits.
研究不足
The device's performance is limited by fabrication tolerances and the sensitivity to etch depth variations. The operational bandwidth is constrained by the design's reliance on mode hybridization.
1：Experimental Design and Method Selection:
The polarization rotator is based on the mode evolution approach utilizing adiabatic symmetric and anti-symmetric tapers for mode conversion.
2：Sample Selection and Data Sources:
Commercially grown Ge-on-Si was used, patterned by electron-beam lithography and etched.
3：List of Experimental Equipment and Materials:
Electron-beam lithography system, mixed gas (SF6 and C4F8) etch process, hydrofluoric acid for residual removal.
4：Experimental Procedures and Operational Workflow:
Fabrication involved patterning, etching, residual removal, dicing, and optical facet polishing. Characterization used a MIR setup with a QCL and polarizers.
5：Data Analysis Methods:
Polarization extinction ratio and insertion loss were calculated from transmitted spectra.
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