研究目的
Investigating the performance of C-band InAs quantum dash waveguide photodiodes for long-haul communication and data transfer systems.
研究成果
The demonstration of high-performance 1.55 μm InAs quantum dash waveguide photodiodes with low dark current and high responsivity, suitable for optical communication systems.
研究不足
The relatively small responsivity and 3-dB bandwidth for the Qdash PDs, and the large pad capacitance limiting the maximum 3-dB bandwidth.
1:Experimental Design and Method Selection:
The study utilized molecular beam epitaxy (MBE) for material growth and processed the as-grown material into deeply etched rectangular shape waveguides.
2:Sample Selection and Data Sources:
The samples were lattice-matched to InP and grown on a semi-insulating double-side-polished InP substrate.
3:List of Experimental Equipment and Materials:
Equipment included a molecular beam epitaxy system, inductive coupled plasma etching system, and atomic-layer deposition system. Materials included InAs, InAlAs, InGaAs, and SiO
4:Experimental Procedures and Operational Workflow:
The process involved epitaxial growth, waveguide fabrication, passivation, and metal contact formation.
5:Data Analysis Methods:
The performance of the photodiodes was characterized through dark current measurements, responsivity measurements, and frequency response analysis.
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