1：Experimental Design and Method Selection:

The study involved the fabrication of a-GIZO/p-GaN heterojunction LEDs and the investigation of their electroluminescence properties under forward and reverse bias conditions.

2：Sample Selection and Data Sources:

A commercially available p-GaN wafer was used. The a-GIZO layer was deposited on the p-GaN wafer using RF magnetron sputtering.

3：List of Experimental Equipment and Materials:

RF magnetron sputtering system, photolithographic techniques, e-beam evaporator, rapid-thermal annealing (RTA) system, parameter analyzer (HP4156A), photodiode (883-UV), and optical spectrometer (Ocean Optics USB2000).

4：0). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The p-GaN wafer was prepared with Ni/Ag/Pt electrodes, followed by the deposition of a-GIZO and the formation of mesa structures. The devices were then characterized electrically and optically.

5：Data Analysis Methods:

The electrical characteristics were analyzed using a parameter analyzer, and the optical properties were investigated using photoluminescence (PL) and electroluminescence (EL) spectroscopy.