研究目的

Investigating the fundamentals of SiGe HBT RF linearity and its compact modeling using Mextram for both common-emitter and common-base configurations.

研究成果

The study concludes that Mextram does an excellent job in modeling the real part, imaginary part as well as the magnitude of third order output current at relatively low VBE. For common-emitter operation, new models introduced can significantly improve IP3 peak behavior modeling. For common-base operation, the current dependence parameter of a new avalanche model can be used to model IP3 peak behavior.

研究不足

The study identifies challenges in modeling at high VBE, particularly for common-emitter operation where the collector-base depletion capacitance control voltage and its smooth limiting are significant in modeling IP3 peak behavior. For common-base operation, the current dependence parameter of a new avalanche model can be used to model IP3 peak behavior, but there is a limitation in fitting both IB and IP3 simultaneously.