研究目的
To present and establish a gold surface plasmon polariton (SPP) GaAs photodetector that achieves high internal quantum efficiency (IQE).
研究成果
The research presents a PIN photodetector with an SPP technique utilizing gold as the SPP layer, achieving an improvement in internal quantum efficiency (IQE) of 43%. The excellent performance is attributed to the subwavelength restraint of the optical power in a photoconductive-based gold SPP GaAs that enables high internal quantum efficiency. Additionally, the arrangement of the SPP in the photodetector shows higher photocurrent and responsivity.
研究不足
The efficient and unidirectional SPP excitation remains one of the greatest challenges because of the fundamental momentum mismatch between the propagating waves and surface waves that prevents their direct coupling.
1：Experimental Design and Method Selection:
The study involved adding gold surface plasmon polaritons (SPPs) at the top of the PIN photodetector to investigate its influence on increasing the photocurrent, internal quantum efficiency (IQE), spectral response, and responsivity.
2：Sample Selection and Data Sources:
A GaAs PIN photodetector was simulated using gold as the SPP layer on the surface of the photodetector.
3：List of Experimental Equipment and Materials:
The model included blown GaAs with 1 μm thickness as active material, a gold SPP layer constructed at the top of the model, and P connector and N connector made of silver.
4：Experimental Procedures and Operational Workflow:
The simulation was carried out under specific conditions including gallium arsenide doping, wavelength, and voltage bias.
5：Data Analysis Methods:
The internal quantum efficiency (IQE), responsivity (R), and photocurrent were calculated using specific equations to analyze the performance of the photodetector.
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