研究目的
Investigating the effect of optimized passivation layers on the leakage characteristics and efficiency of GaN-based micro-light-emitting diodes (micro-LEDs).
研究成果
The ALD-Al2O3/PECVD-SiO2 double passivation layer was found to more effectively reduce the sidewall damage-induced current and improve the external quantum efficiency of micro-LEDs compared to the single PECVD-SiO2 layer. This suggests that the combination of ALD and PECVD techniques can serve as an efficient passivation strategy for micro-LED fabrication.
研究不足
The study focuses on the effect of passivation layers on micro-LEDs of specific sizes and materials, potentially limiting the generalizability of the findings to other LED types or sizes. The deposition techniques (ALD and PECVD) may also introduce specific constraints in terms of scalability or cost.
1：Experimental Design and Method Selection:
The study employed atomic layer deposition (ALD) for Al2O3 and plasma-enhanced chemical vapour deposition (PECVD) for SiO2 passivation layers to investigate their effects on micro-LED performance.
2：Sample Selection and Data Sources:
InGaN-based micro-LEDs of different sizes were used, with passivation layers of ALD-Al2O3 (50 nm)/PECVD-SiO2 (250 nm) and PECVD-SiO2 (300 nm).
3：List of Experimental Equipment and Materials:
A high-current source-measuring unit for I-V characteristics, emission microscope (PHEMOS-1000, Hamamatsu Photonics) for examining leakage spots.
4：Experimental Procedures and Operational Workflow:
The samples were cleaned, passivation layers were deposited, and then characterized for current density-voltage characteristics and external quantum efficiency (EQE).
5：Data Analysis Methods:
Ideality factors were calculated to analyze the leakage behavior and efficiency of the micro-LEDs.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
