研究目的
Investigating the generation-recombination (G-R) voltage noise spectrum in uniformly doped majority-carrier n-type semiconductor samples and its dependence on the electric field.
研究成果
The study presents corrected and extended formulas for the G-R voltage noise spectrum in uniformly doped n-type semiconductor samples, demonstrating saturation of the noise spectrum at high electric fields. The electron density fluctuation becomes asymmetric with increasing electric field, leading to the saturation of the G-R noise voltage spectrum. The findings provide a foundation for further investigation of G-R noise in more complex semiconductor devices.
研究不足
The study assumes constant electron mobility and diffusion coefficient, neglecting the velocity saturation effect and hot electron effects in high electric field regions. The model is idealized and may not fully capture the behavior in real semiconductor samples where these effects are significant.
1：Experimental Design and Method Selection:
The study employs a theoretical model based on the drift-diffusion transport model to derive the formula for the voltage noise spectrum due to G-R rate fluctuations. The model includes the Poisson equation, the electron continuity equation, and the trap rate equation.
2：Sample Selection and Data Sources:
The study considers a two-terminal n-type uniformly-doped semiconductor sample with specific parameters such as electron density, length, permittivity, mobility, and cross-sectional area.
3：List of Experimental Equipment and Materials:
The study does not specify experimental equipment but relies on theoretical modeling and numerical simulation.
4：Experimental Procedures and Operational Workflow:
The study involves deriving the formula for the G-R voltage noise spectrum and analyzing its behavior under different electric field strengths through numerical simulation.
5：Data Analysis Methods:
The study uses numerical simulation to analyze the behavior of the G-R voltage noise spectrum and electron density fluctuations under varying electric fields.
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