研究目的
Investigating the electrical properties of Schottky junctions fabricated by the deposition of colloidal graphite on different crystallographic orientations of ZnO substrates.
研究成果
The study concludes that the crystallographic orientation of ZnO substrates significantly affects the formation and properties of graphite/ZnO Schottky junctions. Laterally homogeneous junctions form on c-plane ZnO, while junctions on a- and m-plane ZnO are inhomogeneous due to higher concentrations of native point defects. An extended equivalent circuit model was developed to better understand the junctions' electrical transport properties.
研究不足
The study is limited by the quality of the ZnO substrates and the fabrication process of the Schottky contacts, which may introduce variability in the electrical properties measured.
1：Experimental Design and Method Selection:
The study involved the fabrication of graphite/ZnO Schottky contacts on a-, m-, and c-plane ZnO substrates using drop casting of a graphite colloidal solution. Electrical properties were studied through current-voltage (I-V), capacitance-voltage-frequency (C-V-f), and impedance spectroscopy measurements.
2：Sample Selection and Data Sources:
Commercially available hydrothermally grown a-, m-, and c-plane ZnO bulk substrates were used. Samples were cleaned ultrasonically in acetone, methanol, and deionized water.
3：List of Experimental Equipment and Materials:
Equipment included a Source Measure Unit Keithley 237 for I-V characteristics, a HeCd laser for photoluminescence measurements, and an Impedance Analyzer Keysight E4990A for AC electrical properties.
4：Experimental Procedures and Operational Workflow:
Graphite contacts were fabricated by drop casting, and back ohmic contacts were created with GaIn alloy. Electrical measurements were conducted to analyze the junctions' properties.
5：Data Analysis Methods:
Data were analyzed using standard thermionic emission model for I-V characteristics, and equivalent circuit analysis for impedance data.
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