研究目的
Exploring the minority carrier lifetime and di?usion in T2SL barrier devices, as an aid to better device optimization.
研究成果
The study demonstrates that the minority carrier lifetime and di?usion length in T2SL barrier devices can be estimated from measurements of dark-current and photo-current as a function of the device dimension, in conjunction with k?p calculations of the T2SL density of states. The results are consistent with values found by others using direct measurements. The di?usion lengths are reported in the range 3–7 μm, although these are not necessary limiting values.
研究不足
The minority carrier lifetime in p-type InAs/GaSb type II superlattices (T2SLs) is quite short, typically in the region of tens of nanoseconds. The lateral and vertical mobility data are relatively scarce.
1：Experimental Design and Method Selection:
The study involves measurements on test devices fabricated during production on the same wafer as high quality LWIR focal plane arrays. Both dark current and photocurrent are measured as a function of mesa dimension in a series of test devices of variable area. The current in the central device of small 5 × 5 test arrays with a 15 or 20 μm pitch is also investigated as a function of the bias on the surrounding devices.
2：Sample Selection and Data Sources:
Test devices are fabricated during production on the same wafer as high quality LWIR focal plane arrays. The devices have an AL thickness of L0 = 4.5 μm and operate at 77 K.
3：5 μm and operate at 77 K.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The study uses InAs/GaSb type II superlattices (T2SLs) grown on a GaSb substrate. The devices are processed as in an FPA and bonded to a silicon fan-out circuit (SFOC) with indium bumps.
4：Experimental Procedures and Operational Workflow:
The dark current and photocurrent are measured as a function of mesa dimension. The current in the central device of small 5 × 5 test arrays is monitored as a function of the bias applied to the surrounding devices.
5：Data Analysis Methods:
The results are fitted to the carrier di?usion length and lifetime, using a k?p model for the carrier statistics.
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