研究目的
Investigating the future of 3D packaging and integration of silicon carbide (SiC) power modules, highlighting major achievements and novel architectures, identifying technology barriers, and assessing the merits of 3D wire bondless approaches for SiC power packaging.
研究成果
The paper concludes that SiC power devices have significant potential but are limited by current packaging technologies. 3D wire bondless packaging is identified as a promising direction for future advancements in SiC power modules, offering reduced parasitics, improved thermal management, and higher power density.
研究不足
The paper does not conduct new experimental work but reviews existing technologies and identifies gaps. The limitations include the lack of new experimental data and the focus on theoretical and conceptual advancements.
