研究目的
To study the influence of reactive ion etching (RIE) on THz transmission and reflection properties of NiCr film deposited on a dielectric substrate.
研究成果
RIE treatment enhances THz absorption of NiCr film by weakening its transmission and reflection, with more significant effects observed for thicker films. The treatment roughens the SiO2 substrate surface, increasing the effective absorption area of the NiCr film.
研究不足
The study focuses on NiCr films and SiO2 substrates, and the effects of RIE treatment are analyzed within specific THz frequency ranges. The applicability to other materials or broader frequency ranges is not explored.
1：Experimental Design and Method Selection:
NiCr films were deposited on untreated and RIE treated SiO2 dielectric substrates with different thicknesses to study THz transmission and reflection characteristics.
2：Sample Selection and Data Sources:
SiO2 thin films were deposited on p-type silicon wafers, and NiCr films with thicknesses of 8 nm, 16 nm, and 24 nm were prepared.
3：List of Experimental Equipment and Materials:
A RIE system (FHR 150 × 4), a Fourier transform infrared spectroscopy (FTIR) system (Perkin Elmer Spectrum 400), and a THz time-domain spectroscopy (THz-TDS) system (EKSPLA) were used.
4：Experimental Procedures and Operational Workflow:
SiO2 films were etched by RIE, NiCr films were deposited by reactive sputtering, and their thicknesses were measured. Transmission and reflection measurements were taken.
5：Data Analysis Methods:
The transmission and reflection curves were analyzed to study the effects of RIE treatment.
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