研究目的
Investigating the performance improvements in hard-switching converters using GaN transistors, focusing on efficiency, size, and cost reduction.
研究成果
GaN transistors offer significant performance improvements in hard-switching converters due to their lower dynamic losses, smaller output capacitance, and zero reverse recovery. The analytical tools developed in this chapter provide a means to calculate and compare these losses, with experimental results validating the theoretical predictions.
研究不足
The analysis assumes ideal conditions and may not account for all real-world parasitic effects. The impact of common-source inductance and loop inductance is significant but difficult to measure accurately without perturbation of the circuit.
1：Experimental Design and Method Selection:
The chapter reviews hard-switching topologies and analyzes the switching and conduction characteristics of GaN transistors.
2：Sample Selection and Data Sources:
Uses GaN transistors (EPC2015) for analysis, with data extracted from device datasheets.
3：List of Experimental Equipment and Materials:
EPC2015 GaN transistors, buck converter setup.
4：Experimental Procedures and Operational Workflow:
Detailed analysis of switching transitions, output capacitance losses, gate charge losses, reverse conduction losses, and reverse recovery losses.
5：Data Analysis Methods:
Graphical and mathematical analysis of switching losses, including the impact of common-source inductance and loop inductance.
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