研究目的
Investigating the effects of a parasitic region in SiC bipolar junction transistors (BJTs) on conductivity modulation and forced current gain (????) using TCAD simulation with various device structures.
研究成果
The study demonstrates that the forced current gain (????) in SiC BJTs can be enhanced by expanding the parasitic area if the base spreading resistance is sufficiently reduced through Al+-implantation. This enhancement is attributed to an expanded conductivity-modulated region due to collector current spreading and hole injection from the parasitic region. However, achieving higher ???? requires higher base voltages, indicating a trade-off between performance and operational requirements.
研究不足
The study is based on simulations, and actual device performance may vary due to manufacturing imperfections and material defects not accounted for in the simulation. The impact of higher base voltages required for larger parasitic areas on device reliability was not explored.
1：Experimental Design and Method Selection:
TCAD simulation was used to evaluate the effects of a parasitic region in SiC BJTs on conductivity modulation and forced current gain (????). Various device structures were simulated, including those with an Al+-implanted region below the base parasitic region to reduce base spreading resistance.
2：Sample Selection and Data Sources:
The study focused on 10-kV class 4H-SiC BJTs with varying parasitic areas and Al+-implanted regions. The doping concentrations and thicknesses of the emitter, base, and collector layers were kept consistent across simulations.
3：List of Experimental Equipment and Materials:
TCAD simulation software was used for the study. The materials involved include 4H-SiC for the BJTs and aluminum for ion implantation.
4：Experimental Procedures and Operational Workflow:
The simulation involved comparing the IC-VC characteristics of devices with and without Al+-implantation under a base current density of 50 Acm-2. The effects of varying the parasitic area (WP) on ???? were analyzed.
5：The effects of varying the parasitic area (WP) on ???? were analyzed.
Data Analysis Methods:
5. Data Analysis Methods: The analysis focused on the distribution of hole density in the collector layer and the current density at specific cross-sections to understand the conductivity modulation and its impact on ????.
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