研究目的
Investigating the effect of thermal annealing on the optical and electrical properties of Se90Sb10 thin films for applications in optical disk data storage technology and solar cells.
研究成果
Thermal annealing induces amorphous-crystalline phase change in Se90Sb10 thin films, beneficial for optical disk data storage technology. The crystallinity improves with increasing annealing temperature. The films exhibit high transparency at 900 nm, making them suitable for infrared transmission. The optical absorption data reveal an indirect allowed optical transition. The optical energy gap decreases with annealing, attributed to the formation of localized states in the band structure. Annealing increases electrical conductivity and decreases activation energy for conduction, enhancing film properties for solar cell applications.
研究不足
The study is limited to the effects of thermal annealing on Se90Sb10 thin films. The highest annealing temperature (473 K) caused partial evaporation of the film material, which may affect the results. Future studies could explore the addition of a third element to the Se–Sb binary system to modify properties further.
1：Experimental Design and Method Selection:
The study involved the preparation of Se90Sb10 bulk alloy by the melt-quench technique and deposition of thin films by thermal evaporation. The effect of thermal annealing at different temperatures on the films was examined.
2：Sample Selection and Data Sources:
The bulk sample was prepared from Se and Sb elements with purity 99.99%. Thin film samples were deposited by thermal evaporation.
3：99%. Thin film samples were deposited by thermal evaporation.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Differential Scanning Calorimetry (DSC) model DU Pont 1090, X-Ray Diffractometer (Philips, PW 1710), Scanning Electron Microscopy (SEM) apparatus Jeol (JSM)-T200 type, double beam spectrophotometer (Shimadzu 2101), high internal impedance electrometer (Keithely 175A).
4：Experimental Procedures and Operational Workflow:
The thermal behavior of the bulk sample was examined using DSC. XRD patterns of the thin films were recorded. SEM was used to investigate the surface morphology. Transmittance and reflectance spectra were measured in the wavelength range 250–2500 nm. Dark electrical conductivity was measured in the temperature range from 300 to 500 K.
5：Data Analysis Methods:
The optical constants and parameters of dispersion of the refractive index were characterized using transmission and reflection spectra. The electrical conductivity was analyzed to determine the activation energy for conduction.
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