研究目的
Investigating the design and performance of an integrable all-silicon all-optical pass switch based on stimulated Raman scattering in a silicon nanocrystal embedded slotted photonic crystal waveguide.
研究成果
The proposed all-silicon all-optical pass switch demonstrates successful switching at 125 Gbps with a high contrast ratio of 27 dB, offering potential for on-chip optical switching applications.
研究不足
The device's performance may be limited by the non-instantaneous SRS interaction within the SiNC/SiO2, causing temporal broadening of pulses at high repetition rates.
1：Experimental Design and Method Selection:
The design is based on stimulated Raman scattering (SRS) in a silicon nanocrystal embedded slotted photonic crystal waveguide (SPCW). The methodology involves solving coupled nonlinear Schrodinger’s (NLS) equations in the slow-light regime for spatio-temporal characterization.
2：Sample Selection and Data Sources:
The device is made of an air-bridge silicon PhC slab with specific geometrical parameters. The slot is made of SiNC/SiO2 material.
3：List of Experimental Equipment and Materials:
Air-bridge silicon PhC slab, SiNC/SiO2 material, photonic crystal waveguide.
4：Experimental Procedures and Operational Workflow:
The device combines pump and Stokes waves in a Y-junction, amplifies through SRS in the SPCW, and filters out undesired Stokes power.
5：Data Analysis Methods:
Performance evaluation through solving coupled NLS equations using a custom-developed program based on the split-step Fourier method.
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