1：Experimental Design and Method Selection:

The study involved the deposition of amorphous Al2O3 on HF dipped 4H-SiC samples by means of atomic layer deposition at a substrate temperature of 300°C. Trimethylaluminum (TMA) and H2O were used as precursor and oxygen source respectively.

2：Sample Selection and Data Sources:

N-type 4H-SiC, 8° off axis with a nitrogen concentration of

3：8×1015 cm?3 was used in this experiment. List of Experimental Equipment and Materials:

Samples were cleaned using solvents, treated with piranha solution prior to standard RCA cleaning followed by sacrificial oxidation at 1150°C for 1 hour.

4：Experimental Procedures and Operational Workflow:

The samples were subjected to post oxide annealing at 450°C and 1050°C in forming gas (5% of H2 diluted by N2). Aluminium was evaporated for the gate metal. For the formation of the back contact, Titanium (5 nm)/Nickel (100 nm) were deposited on the highly doped backside of the samples and annealed at 1050°C for 200s in forming gas.

5：2). Aluminium was evaporated for the gate metal. For the formation of the back contact, Titanium (5 nm)/Nickel (100 nm) were deposited on the highly doped backside of the samples and annealed at 1050°C for 200s in forming gas. Data Analysis Methods:

5. Data Analysis Methods: Electrical characteristics of the MOS capacitors after annealing using a Rapid Thermal Anneal process at different temperatures were investigated.