研究目的
Investigating the application of Au/Sn intermetallic compounds for the assembly of monocrystalline GaN chips to DBC substrates for high temperature operation.
研究成果
The SLID process based on Au-Sn intermetallic compounds is suitable for assembling monocrystalline GaN chips to DBC substrates for high-temperature applications. Both one-stage and two-stage processes can be applied, with the critical parameter being the application of sufficient pressure. Further optimization of the two-stage process is needed.
研究不足
The critical condition for successful assembly is the application of high enough pressure on the chip to initiate the diffusion process. The process parameters, especially pressure and temperature, need to be carefully optimized to avoid damage to the chip or its metallization.
1：Experimental Design and Method Selection:
The study focused on two versions of SLID bonding: one-stage process at 350°C and two-stage process at 280°C + 180°C. Design of experiments technique was used for process optimization.
2：Sample Selection and Data Sources:
Dummy chips and monocrystalline GaN chips with specific metallization were used. DBC substrates with Sn mounting metallization were prepared.
3：List of Experimental Equipment and Materials:
DBC substrates, monocrystalline GaN chips, Sn mounting layer, and specific metallization layers (Ti/Al/Ni/Au for GaN chips, Ni(P)/Au for dummy chips).
4：Experimental Procedures and Operational Workflow:
The process involved applying pressure and temperature to form intermetallic compounds between Au and Sn, followed by solid-state diffusion.
5：Data Analysis Methods:
Shear tests were conducted to measure adhesion strength, and microscopic observation was used to assess joint quality.
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