研究目的
To introduce the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.
研究成果
An in-depth analysis and summary of the results summarized, emphasizing interpretability and forward-looking nature. Based on the results, it further refines the core findings, significance of the research, and suggestions for future studies.
研究不足
The technical and application constraints of the experiments, as well as potential areas for optimization.
1：Experimental Design and Method Selection:
Includes the overall experimental design rationale, the theoretical models or algorithms employed, and detailed procedures of the experimental methods.
2：Sample Selection and Data Sources:
Specifies the samples or datasets used in the experiment, including selection criteria and data acquisition methods.
3：List of Experimental Equipment and Materials:
Enumerates the required instruments, devices, and materials, along with their specifications and intended uses.
4：Experimental Procedures and Operational Workflow:
Provides a step-by-step description of the experimental process, covering equipment setup, data collection techniques, and control of variables during the experiment.
5：Data Analysis Methods:
Explains the approach for analyzing experimental data, including statistical techniques and software tools utilized.
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FEI Quanta 600F
Quanta 600F
FEI
Used to conduct the aforementioned characterization.
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FEI Tecnai F20
Tecnai F20
FEI
Used to determine the crystal structure and morphology of InAs nanowires.
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Veeco Multimode V
Multimode V
Veeco
Used to accurately determine the diameter of the InAs nanowires.
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Kurt J. Lesker AXXIS
AXXIS
Kurt J. Lesker
Used to deposit metal films.
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Kurt J. Lesker PVD75
PVD75
Kurt J. Lesker
Used to deposit metals such as chromium and gold and to clean native oxides of III-V nanowires at the same time.
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Lakeshore TTP4
TTP4
Lakeshore
Used to measure the electrical properties of micro/nano-scale electronic devices.
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Keithly 4200SCS
4200SCS
Keithly
Used to perform electrical measurements of a single FET.
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Carl Zeiss Axio Imager
Carl Zeiss
Used to quickly examine the nanowires’ geometry and coarsely locate the position.
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Kleindiek MM3A
MM3A
Kleindiek
Used to transfer InAs nanowires that have completed electrical measurements to a coordinate microgrid used for TEM characterization.
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Süss MJB4
MJB4
Süss
Used to fabricate large marks for locating the position of nanowires and their devices.
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Raith 150 II
150 II
Raith
Used to pattern the resist layer upon the wafer.
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Cambridge Nanotech Savannah 100
Savannah 100
Cambridge Nanotech
Used to deposit aluminum oxide or yttrium oxide film as the gate dielectric of devices and can also be used for the package of devices and surface treatment of III-V material.
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Mingheng PDC-MG
PDC-MG
Mingheng
Used to remove the photoresist which functions as the support layer when fabricates suspended InAs nanowire devices and to etch the residual resist in EBL process.
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